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| 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES * WIDE-BAND: 2 to 8 GHz * HIGH GAIN: 15 dB at f = 2 to 8 GHz * MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz * INPUT/OUTPUT IMPEDANCE MATCHED TO 50 * HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs. FREQUENCY AND TEMPERATURE 20 15 10 5 0 -5 -10 T = -25C T = +25C T = +75C RELIABILITY DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form. 0 2 4 6 8 10 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS1 (TA = 25 3C, ZS = ZL = 50 , VDD = +8 V, f = 2.0 to 8.0 GHz) PART NUMBER PACKAGE OUTLINE SYMBOLS IDD GP GL RLIN RLOUT ISOL P1dB IP3 Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 dB Compression Point SSB Third Order Intercept Point PARAMETERS UNITS mA dB dB dB dB dB dBm dBm 6 7 30 10 10 10 40 14 25 MIN 65 12 UPG110B/P FA/CHIP TYP 135 15 1.5 MAX 180 Note: 1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC. California Eastern Laboratories UPG110B, UPG110P ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDD VIN PIN PT TC TSTG PARAMETERS Drain Voltage Input Voltage Input Power Total Power Dissipation Case Temperature Storage Temperature UNITS V V dBm W C C RATINGS +10 -5 to +0.6 +10 1.5 -65 to +125 -65 to +175 IN RG1 LG1 RS1 CS LIN L1 C1 RG2 RL1 LL1 RL2 LL2 L2 C2 RG3 C4 VDD R1 RF2 LL3 L3 C3 OUT EQUIVALENT CIRCUIT R2 CRF RF1 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) INPUT/OUTPUT RETURN LOSS vs. FREQUENCY OUTPUT POWER vs. INPUT POWER AND FREQUENCY Input Return Loss, RLIN (dB) Output Retun Loss, RLOUT (dB) 20 RLIN -10 Output Power, POUT (dBm) 0 10 -20 RLOUT -30 0 f = 2 GHz f = 5 GHz f = 8 GHz -20 -10 0 10 0 1 2 3 4 5 6 7 8 9 10 Frequency, f (GHz) Input Power, PIN (dBm) ISOLATION vs. FREQUENCY 0 20 OUTPUT POWER vs. INPUT POWER AND GAIN CONTROL -40 Output Power, POUT (dBm) -20 Isolation, ISOL (dB) 10 -60 0 dB 0 -3.1 dB -5.3 dB -7.9 dB -10 -11.7 dB -10 VG = 0 V VG = -0.3 V VG = -0.5 V VG = -0.7 V VG = -0.9 V 0 IDD = 130 mA IDD = 110 mA -80 IDD = 99 mA IDD = 91 mA IDD = 83 mA 10 0 1 2 3 4 5 6 7 8 9 10 Frequency, f (GHz) Input Power, PIN (dBm) Note: Gain control can be achieved by applying a negative voltage (VG) to the input pin. UPG110B, UPG110P TYPICAL SCATTERING PARAMETERS UPG110B VDD = 8V, IDD = 135 mA FREQUENCY GHZ 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 MAG 0.375 0.249 0.146 0.103 0.074 0.047 0.013 0.131 0.230 0.310 0.361 0.415 0.437 0.433 0.385 0.321 0.298 0.382 0.475 0.548 0.554 0.460 0.585 0.771 0.769 S11 ANG -78 -101 -134 -164 -178 171 125 -68 -91 -113 -132 -150 -173 165 129 87 40 -4 -36 -57 -73 -76 -57 -71 -82 MAG 1.075 2.899 4.321 5.421 5.860 6.068 5.176 4.863 4.579 4.179 3.879 3.749 3.845 3.946 4.104 4.233 4.354 3.848 3.553 3.334 3.290 3.530 3.178 1.665 0.871 S21 ANG 14 -50 -123 -177 151 119 92 53 5 -40 -81 -120 -159 158 114 67 14 -35 -80 -125 -173 132 70 9 -28 S12 MAG 0.001 0.001 0.001 0.002 0.003 0.006 0.008 0.006 0.006 0.007 0.008 0.009 0.010 0.012 0.014 0.016 0.015 0.015 0.015 0.017 0.022 0.032 0.047 0.057 0.086 ANG -171 143 133 97 88 64 38 0 -16 -31 -45 -60 -74 -89 -110 -134 -164 -171 177 164 153 141 116 83 53 MAG 0.967 0.862 0.648 0.384 0.224 0.182 0.338 0.103 0.074 0.161 0.189 0.180 0.177 0.207 0.282 0.364 0.357 0.294 0.251 0.222 0.216 0.175 0.269 0.512 0.558 S22 ANG -26 -51 -85 -132 -157 -126 -152 127 -96 -120 -137 -144 -142 -136 -141 -160 167 143 104 51 -1 -21 9 -23 -50 K 25.7 41.6 65.8 38.9 26.7 13.3 10.7 16.7 17.2 15.1 13.6 11.9 10.2 8.2 6.7 5.7 6.0 6.7 6.7 5.8 4.5 3.4 2.2 2.0 2.3 S21 dB 0.6 9.2 12.7 14.7 15.4 15.7 14.3 13.7 13.2 12.4 11.8 11.5 11.7 11.9 12.3 12.5 12.8 11.7 11.0 10.5 10.3 11.0 10.0 4.4 -1.2 OUTLINE DIMENSIONS (Units in mm) UPG110B PACKAGE OUTLINE FA 4.5 MAX LEAD 1 & 3 0.6 0.06 3 1.1 mm 50 to 100 m VDD UPG110P (CHIP) VDD 39 pF 200 to 500 m LESS THAN 300 m GND 5 2 4.6 MAX 4 500 to 1000 m IN OUT 200 to 500 m 4.1 MIN +0.2 0.7 -0.1 0.1 0.06 4.1 MIN 1 LEAD 2 & 4 0.4 0.06 1 GND 2 GND 3 GND 4 GND LESS THAN 200 m 1.48 MAX 1.3 mm Bonding Pad Size: 200 m x 200 m RECOMMENDED CHIP ASSEMBLY CONDITIONS DIE ATTACHMENT Atmosphere: N2 gas Temperature: 320 5C AuSn Preform: UPG100P, 101P, 103P 0.5 x 0.5 x 0.05 (mm), 1 pc UPG102P 1.2 x 1.2 x 0.05 (mm), 1 pc *The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material: CuW, Cu, KV (Other material should not be used) Epoxy Die Attach is not recommended. BONDING Machine: TCB (USB is not recommended) Wire: 30 m diameter Au wire Temperature: 260 10C Strength: 44 5g Atmosphere: N2 gas RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS 1. VDD 2. In 3. Non Connection 4. Out Case: GND EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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